BCX53-10,115
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- Mfr.Part #
- BCX53-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 69,683
- In Stock ：
- 69,683
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BCX53
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Length :
- 4.6mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Power - Max :
- 1.3W
- Transition Frequency :
- 145MHz
- Element Configuration :
- Single
- Frequency :
- 145MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-243AA
- Power Dissipation :
- 1.35W
- Max Power Dissipation :
- 1.3W
- Number of Elements :
- 1
- Height :
- 1.6mm
- Max Collector Current :
- 1A
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 145MHz
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Width :
- 2.6mm
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Datasheets
- BCX53-10,115
BCX53-10,115 Documents
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX53-10,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 145MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCX53-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCX53-10,115 Applications
There are a lot of Nexperia USA Inc.
BCX53-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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