BCX5216TA
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- Mfr.Part #
- BCX5216TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT89-3
- Stock
- 9,269
- In Stock ：
- 9,269
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2011
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-243AA
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- -500mV
- JESD-30 Code :
- R-PSSO-F3
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current Rating :
- -1A
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 150MHz
- Base Part Number :
- BCX52
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -60V
- Length :
- 4.5mm
- Gain Bandwidth Product :
- 150MHz
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Pin Count :
- 3
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Additional Feature :
- High Reliability
- Weight :
- 51.993025mg
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 150MHz
- Power Dissipation :
- 1W
- Width :
- 2.5mm
- Height :
- 1.5mm
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- Datasheets
- BCX5216TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
BCX5216TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCX5216TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCX5216TA Applications
There are a lot of Diodes Incorporated
BCX5216TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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