BCX5210TA
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- Mfr.Part #
- BCX5210TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT89-3
- Stock
- 23,813
- In Stock ：
- 23,813
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 4.5mm
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 1A
- Height :
- 1.5mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Weight :
- 51.993025mg
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Base Part Number :
- BCX52
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2011
- Power Dissipation :
- 1W
- Width :
- 2.5mm
- Contact Plating :
- Tin
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Terminal Form :
- Flat
- Collector Emitter Saturation Voltage :
- -500mV
- Package / Case :
- TO-243AA
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Datasheets
- BCX5210TA
BCX5210TA Documents
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX5210TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
BCX5210TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5210TA Applications
There are a lot of Diodes Incorporated
BCX5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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