BCX5210TA
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- Mfr.Part #
- BCX5210TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT89-3
- Stock
- 23,813
- In Stock ：
- 23,813
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Additional Feature :
- High Reliability
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -500mV
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-F3
- Length :
- 4.5mm
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 60V
- Height :
- 1.5mm
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Form :
- Flat
- Frequency :
- 150MHz
- Width :
- 2.5mm
- Published :
- 2011
- Element Configuration :
- Single
- Number of Pins :
- 4
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BCX52
- Weight :
- 51.993025mg
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-243AA
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 150MHz
- Pin Count :
- 3
- Datasheets
- BCX5210TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX5210TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
BCX5210TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5210TA Applications
There are a lot of Diodes Incorporated
BCX5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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