BCX51H6327XTSA1

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Mfr.Part #
BCX51H6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 45V 1A SOT89
Stock
3,200
In Stock :
3,200

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Current - Collector (Ic) (Max) :
1A
Mounting Type :
Surface Mount
Frequency :
125MHz
Transistor Type :
PNP
Power Dissipation :
2W
Mount :
Surface Mount
Package / Case :
TO-243AA
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
45V
Collector Base Voltage (VCBO) :
45V
Collector Emitter Voltage (VCEO) :
45V
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Factory Lead Time :
4 Weeks
Published :
2011
Current - Collector Cutoff (Max) :
100nA ICBO
Max Power Dissipation :
2W
Max Collector Current :
1A
Number of Elements :
1
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
ECCN Code :
EAR99
Series :
Automotive, AEC-Q101
Datasheets
BCX51H6327XTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCX51H6327XTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Number of Pins:3, BCX51H6327XTSA1 pinout, BCX51H6327XTSA1 datasheet PDF, BCX51H6327XTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCX51H6327XTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCX51H6327XTSA1


PNP 150°C TJ 100nA ICBO 1 Elements TO-243AA Tape & Reel (TR) Surface Mount

BCX51H6327XTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCX51H6327XTSA1 Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BCX51H6327XTSA1 Applications


There are a lot of Infineon Technologies
BCX51H6327XTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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