BCR133SE6327BTSA1
- Mfr.Part #
- BCR133SE6327BTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2NPN PREBIAS 0.25W SOT363
- Stock
- 10,926
- In Stock :
- 10,926
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Max Operating Temperature :
- 150°C
- Transition Frequency :
- 130MHz
- Resistor - Emitter Base (R2) :
- 10k Ω
- Base Part Number :
- BCR133S
- Frequency - Transition :
- 130MHz
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Resistor - Base (R1) :
- 10k Ω
- Number of Pins :
- 6
- Case Connection :
- Isolated
- Min Operating Temperature :
- -65°C
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Terminations :
- 6
- Package / Case :
- 6-VSSOP, SC-88, SOT-363
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Max Collector Current :
- 100mA
- Number of Elements :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Mount :
- Surface Mount
- Element Configuration :
- Dual
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 250mW
- Transistor Application :
- SWITCHING
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Published :
- 2004
- Collector Emitter Breakdown Voltage :
- 50V
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCR133SE6327BTSA1
BCR133SE6327BTSA1 Documents

BCR133SE6327BTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Infineon Technologies stock available at
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