BCR129SE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

Package Shape :

RECTANGULAR

Terminal Position :

Dual

Manufacturer :

Infineon Technologies AG

Package :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 5mA, 5V

Power - Max :

250mW

Current - Collector (Ic) (Max) :

100mA

Supplier Device Package :

PG-SOT23-3-11

Terminal Form :

Gull wing

DC Current Gain-Min (hFE) :

120

Reach Compliance Code :

Compliant

Surface Mount :

yes

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50V

Product Status :

Active

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G6

Frequency - Transition :

150MHz

Number of Terminals :

6

Series :

-

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Collector Current-Max (IC) :

0.1 A

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

-

Number of Elements :

2

Collector-Emitter Voltage-Max :

50 V

Resistor - Base (R1) :

10kOhms

Transistor Element Material :

SILICON