BCR10PNH6730

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Terminations :

6

Frequency - Transition :

130MHz

Base Part Number :

BCR10PN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Max Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

10k Ω

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-65°C

Transistor Application :

SWITCHING

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Collector Current :

100mA

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

6-VSSOP, SC-88, SOT-363

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Polarity :

NPN, PNP

Max Operating Temperature :

150°C

Transition Frequency :

130MHz

Number of Elements :

2

Number of Pins :

6

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA