BC879,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-30 Code :

O-PBCY-T3

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Power - Max :

830mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Frequency - Transition :

200MHz

VCEsat-Max :

1.8 V

Power Dissipation-Max (Abs) :

0.8W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Current - Collector Cutoff (Max) :

50nA

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Current - Collector (Ic) (Max) :

1A

Transition Frequency :

200MHz

Transistor Type :

NPN - Darlington

Polarity/Channel Type :

NPN

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Number of Elements :

1

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

80V

Transistor Application :

SWITCHING

Published :

1999

Packaging :

Bulk

Mounting Type :

Through Hole

Additional Feature :

BUILT-IN BIAS RESISTOR

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Terminal Finish :

Tin