BC875,126
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- Mfr.Part #
- BC875,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 1A TO92-3
- Stock
- 47,239
- In Stock ：
- 47,239
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Published :
- 1999
- Frequency - Transition :
- 200MHz
- Power - Max :
- 830mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Tape and Box (TB)
- Datasheets
- BC875,126
,TO-226_straightlead.jpg)
NPN - Darlington 150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC875,126 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 500mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1mA, 1A.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC875,126 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
BC875,126 Applications
There are a lot of NXP USA Inc.
BC875,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BC879,112 | NXP Semiconductors | 46,778 | TRANS NPN DARL 80V 1A TO92-3 |
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