BC859CW

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Series :

Automotive, AEC-Q101

Power Dissipation :

200mW

Package / Case :

SC-70, SOT-323

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Contact Plating :

Tin

Transition Frequency :

100MHz

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Pin Count :

3

Published :

2009

Base Part Number :

BC859

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

30V

Gain Bandwidth Product :

100MHz

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Collector-Base Capacitance-Max :

5pF

Frequency :

100MHz

Max Power Dissipation :

200mW

Number of Pins :

3

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Base Voltage (VCBO) :

30V