BC859CW

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Number of Terminations :

3

Max Power Dissipation :

200mW

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BC859

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

100MHz

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Collector-Base Capacitance-Max :

5pF

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

100MHz

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

Contact Plating :

Tin

Pin Count :

3

Published :

2009

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Package / Case :

SC-70, SOT-323

Element Configuration :

Single

Series :

Automotive, AEC-Q101

Power Dissipation :

200mW

Collector Emitter Voltage (VCEO) :

30V

Current - Collector Cutoff (Max) :

15nA ICBO

Transistor Element Material :

SILICON

Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Radiation Hardening :

No