BC859CLT1G
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- Mfr.Part #
- BC859CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 17,457
- In Stock ：
- 17,457
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Base Part Number :
- BC859
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- hFE Min :
- 420
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -30V
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -100mA
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -30V
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -650mV
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 650mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2005
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Datasheets
- BC859CLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859CLT1G Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -650mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC859CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC859CLT1G Applications
There are a lot of ON Semiconductor
BC859CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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