BC859BW,115
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- Mfr.Part #
- BC859BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC859 - PNP GENERAL PUR
- Stock
- 4,116
- In Stock ：
- 4,116
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Additional Feature :
- LOW NOISE
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 200mW
- hFE Min :
- 220
- Number of Pins :
- 3
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Collector-Base Capacitance-Max :
- 5pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- SC-70, SOT-323
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Base Part Number :
- BC859
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Datasheets
- BC859BW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC859BW,115 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC859BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC859BW,115 Applications
There are a lot of Nexperia USA Inc.
BC859BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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