BC859BW,115
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- Mfr.Part #
- BC859BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NEXPERIA BC859 - PNP GENERAL PUR
- Stock
- 4,116
- In Stock ：
- 4,116
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 220
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 100mA
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 200mW
- Number of Pins :
- 3
- Base Part Number :
- BC859
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Collector-Base Capacitance-Max :
- 5pF
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW NOISE
- Datasheets
- BC859BW,115
BC859BW,115 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC859BW,115 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC859BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC859BW,115 Applications
There are a lot of Nexperia USA Inc.
BC859BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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