BC859BW,115
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- Mfr.Part #
- BC859BW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT323
- Stock
- 29,389
- In Stock ：
- 29,389
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Base Part Number :
- BC859
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Power Dissipation :
- 200mW
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Additional Feature :
- LOW NOISE
- Collector-Base Capacitance-Max :
- 5pF
- hFE Min :
- 220
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- BC859BW,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC859BW,115 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC859BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC859BW,115 Applications
There are a lot of Nexperia USA Inc.
BC859BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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