BC859BMTF
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- Mfr.Part #
- BC859BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 32,887
- In Stock ：
- 32,887
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Additional Feature :
- LOW NOISE
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 150MHz
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -250mV
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 310mW
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC859
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 110
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- -30V
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 310mW
- Max Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Voltage - Rated DC :
- -30V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current Rating :
- -100mA
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 150MHz
- Datasheets
- BC859BMTF
BC859BMTF Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC859BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC859BMTF Applications
There are a lot of ON Semiconductor
BC859BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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