BC859BMTF
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- Mfr.Part #
- BC859BMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 32,887
- In Stock ：
- 32,887
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 110
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -250mV
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Qualification Status :
- Not Qualified
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Frequency :
- 150MHz
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- -30V
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Power Dissipation :
- 310mW
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Additional Feature :
- LOW NOISE
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current Rating :
- -100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 150MHz
- Collector Base Voltage (VCBO) :
- -30V
- Base Part Number :
- BC859
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 310mW
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Datasheets
- BC859BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC859BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC859BMTF Applications
There are a lot of ON Semiconductor
BC859BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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