BC859BMTF
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- Mfr.Part #
- BC859BMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 32,887
- In Stock ：
- 32,887
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- Gain Bandwidth Product :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 30V
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Power Dissipation :
- 310mW
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- BC859
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Current Rating :
- -100mA
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -250mV
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 310mW
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- hFE Min :
- 110
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Additional Feature :
- LOW NOISE
- Voltage - Rated DC :
- -30V
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Datasheets
- BC859BMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BMTF Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC859BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC859BMTF Applications
There are a lot of ON Semiconductor
BC859BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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