BC859BLT1
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- Mfr.Part #
- BC859BLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 23,583
- In Stock ：
- 23,583
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 150
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Number of Pins :
- 3
- Published :
- 2005
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- -30V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -650mV
- Element Configuration :
- Single
- Current Rating :
- -100mA
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 100mA
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- -50V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Peak Reflow Temperature (Cel) :
- 240
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 650mV
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- BC859
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Datasheets
- BC859BLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859BLT1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
BC859BLT1 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC859BLT1 Applications
There are a lot of ON Semiconductor
BC859BLT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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