BC859B

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Mfr.Part #
BC859B
Manufacturer
Diotec Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 0.1A SOT23-3
Stock
30,000
In Stock :
30,000

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Manufacturer :
Diotec Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Number of Pins :
3
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
30V
ECCN Code :
EAR99
Factory Lead Time :
4 Weeks
Transition Frequency :
100MHz
Collector Emitter Breakdown Voltage :
30V
Transistor Type :
PNP
Max Power Dissipation :
250mW
Collector Base Voltage (VCBO) :
30V
Element Configuration :
Single
Polarity/Channel Type :
PNP
Collector Emitter Saturation Voltage :
650mV
Gain Bandwidth Product :
100MHz
Pin Count :
3
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
30
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Emitter Base Voltage (VEBO) :
5V
Frequency :
100MHz
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
Published :
2009
Length :
3mm
hFE Min :
220
Mount :
Surface Mount
Current - Collector Cutoff (Max) :
15nA ICBO
Max Collector Current :
100mA
Terminal Form :
Gull wing
Package / Case :
TO-236-3, SC-59, SOT-23-3
Height :
1mm
Number of Elements :
1
Termination :
SMD/SMT
Power Dissipation :
250mW
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Base Part Number :
BC859
Contact Plating :
Tin
Width :
1.4mm
Transistor Application :
AMPLIFIER
Series :
Automotive, AEC-Q101
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
30V
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
JESD-609 Code :
e3
Datasheets
BC859B
Introducing Transistors - Bipolar (BJT) - Single Diotec Semiconductor BC859B from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:BC859, BC859B pinout, BC859B datasheet PDF, BC859B amp .Beyond Transistors - Bipolar (BJT) - Single Diotec Semiconductor BC859B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diotec Semiconductor BC859B


PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC859B,215 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC859B,215 Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC859B,215 Applications


There are a lot of Nexperia USA Inc.
BC859B,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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