BC859B,215
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- Mfr.Part #
- BC859B,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC859B - SMALL SIGNAL B
- Stock
- 72
- In Stock ：
- 72
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 650mV
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- BC859
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Height :
- 1mm
- Contact Plating :
- Tin
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 100MHz
- hFE Min :
- 220
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 30V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 250mW
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Length :
- 3mm
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Published :
- 2009
- Number of Terminations :
- 3
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BC859B,215
BC859B,215 Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC859B,215 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC859B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of 650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC859B,215 Applications
There are a lot of Nexperia USA Inc.
BC859B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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