BC858W,115
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- Mfr.Part #
- BC858W,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC858W - SMALL SIGN
- Stock
- 187,404
- In Stock ：
- 187,404
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Power Dissipation :
- 200mW
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC858
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 30V
- Published :
- 2009
- Collector-Base Capacitance-Max :
- 5pF
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Package / Case :
- SC-70, SOT-323
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Datasheets
- BC858W,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858W,115 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC858W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,115 Applications
There are a lot of Nexperia USA Inc.
BC858W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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