BC858W,115
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- Mfr.Part #
- BC858W,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT323
- Stock
- 187,404
- In Stock ：
- 187,404
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC858
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Published :
- 2009
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Collector-Base Capacitance-Max :
- 5pF
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Element Configuration :
- Single
- Datasheets
- BC858W,115
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858W,115 Overview
DC current gain in this device equals 125 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC858W,115 Features
the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC858W,115 Applications
There are a lot of Nexperia USA Inc.
BC858W,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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