BC858CWH6327XTSA1
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- Mfr.Part #
- BC858CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT323
- Stock
- 198,000
- In Stock ：
- 198,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 650mV
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- Dual
- Base Part Number :
- BC858
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Halogen Free :
- Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Transistor Application :
- AMPLIFIER
- Configuration :
- Single
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Additional Feature :
- LOW NOISE
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Datasheets
- BC858CWH6327XTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858CWH6327XTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 100mA volts can be achieved.
BC858CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BC858CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC858CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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