BC858CMTF
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- Mfr.Part #
- BC858CMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 34,116
- In Stock ：
- 34,116
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 310mW
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Length :
- 2.9mm
- Height :
- 930μm
- Base Part Number :
- BC858
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- -30V
- Current Rating :
- -100mA
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -30V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.3mm
- Terminal Position :
- Dual
- hFE Min :
- 110
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 310mW
- Published :
- 2004
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 17 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Frequency :
- 150MHz
- Datasheets
- BC858CMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CMTF Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC858CMTF Applications
There are a lot of ON Semiconductor
BC858CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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