BC858CMTF
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- Mfr.Part #
- BC858CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 12,005
- In Stock ：
- 12,005
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Power Dissipation :
- 310mW
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- hFE Min :
- 110
- Terminal Position :
- Dual
- Base Part Number :
- BC858
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 17 Weeks
- Transistor Application :
- SWITCHING
- Width :
- 1.3mm
- Collector Emitter Saturation Voltage :
- -250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Current Rating :
- -100mA
- Published :
- 2004
- Height :
- 930μm
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- Weight :
- 30mg
- Collector Base Voltage (VCBO) :
- -30V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Voltage - Rated DC :
- -30V
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC858CMTF
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CMTF Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC858CMTF Applications
There are a lot of ON Semiconductor
BC858CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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