BC858CMTF
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- Mfr.Part #
- BC858CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 12,005
- In Stock ：
- 12,005
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 150MHz
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 310mW
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Height :
- 930μm
- Length :
- 2.9mm
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 30V
- Base Part Number :
- BC858
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Factory Lead Time :
- 17 Weeks
- Power Dissipation :
- 310mW
- Contact Plating :
- Tin
- Width :
- 1.3mm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- -30V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- -100mA
- Weight :
- 30mg
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 150MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 150MHz
- hFE Min :
- 110
- Published :
- 2004
- Datasheets
- BC858CMTF
BC858CMTF Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CMTF Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC858CMTF Applications
There are a lot of ON Semiconductor
BC858CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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