BC858CLT3G
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- Mfr.Part #
- BC858CLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 2,608
- In Stock ：
- 2,608
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- -650mV
- Pin Count :
- 3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- hFE Min :
- 420
- Height :
- 940μm
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Length :
- 2.9mm
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Published :
- 2005
- Current Rating :
- -100mA
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Voltage - Rated DC :
- -30V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Width :
- 1.3mm
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- BC858CLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT3G Applications
There are a lot of ON Semiconductor
BC858CLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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