BC858CLT3G

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Mfr.Part #
BC858CLT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 0.1A SOT23-3
Stock
2,608
In Stock :
2,608

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Terminal Position :
Dual
Factory Lead Time :
4 Weeks
Current Rating :
-100mA
Pin Count :
3
Radiation Hardening :
No
Polarity/Channel Type :
PNP
Gain Bandwidth Product :
100MHz
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Published :
2005
Width :
1.3mm
Height :
940μm
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
3
Frequency :
100MHz
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
420 @ 2mA 5V
Number of Pins :
3
Current - Collector Cutoff (Max) :
15nA ICBO
Length :
2.9mm
Max Power Dissipation :
300mW
Collector Emitter Saturation Voltage :
-650mV
Surface Mount :
yes
Collector Base Voltage (VCBO) :
30V
ECCN Code :
EAR99
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Terminal Form :
Gull wing
Max Collector Current :
100mA
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
30V
Transistor Type :
PNP
Package / Case :
TO-236-3, SC-59, SOT-23-3
Peak Reflow Temperature (Cel) :
260
Emitter Base Voltage (VEBO) :
5V
Voltage - Rated DC :
-30V
Transistor Element Material :
SILICON
hFE Min :
420
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
300mW
Contact Plating :
Tin
Mounting Type :
Surface Mount
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
30V
Transition Frequency :
100MHz
Lead Free :
Lead Free
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - Bipolar (BJT) - Single onsemi BC858CLT3G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, BC858CLT3G pinout, BC858CLT3G datasheet PDF, BC858CLT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC858CLT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC858CLT3G


PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC858CLT3G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.

BC858CLT3G Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz


BC858CLT3G Applications


There are a lot of ON Semiconductor
BC858CLT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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