BC858CLT3G
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- Mfr.Part #
- BC858CLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 2,608
- In Stock ：
- 2,608
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -650mV
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 300mW
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.9mm
- Width :
- 1.3mm
- Published :
- 2005
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Height :
- 940μm
- Voltage - Rated DC :
- -30V
- hFE Min :
- 420
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- ECCN Code :
- EAR99
- Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- BC858CLT3G
BC858CLT3G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT3G Applications
There are a lot of ON Semiconductor
BC858CLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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