BC858CLT3
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- Mfr.Part #
- BC858CLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 2,375
- In Stock ：
- 2,375
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -650mV
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Number of Elements :
- 1
- Published :
- 2005
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Power Dissipation :
- 300mW
- Max Power Dissipation :
- 300mW
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- hFE Min :
- 420
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Voltage - Rated DC :
- -30V
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Height :
- 940μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Current Rating :
- -100mA
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Length :
- 2.9mm
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- BC858CLT3
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858CLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 100mA volts.
BC858CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT3G Applications
There are a lot of ON Semiconductor
BC858CLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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