BC858CLT1G
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- Mfr.Part #
- BC858CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 28,253
- In Stock ：
- 28,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- hFE Min :
- 420
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -650mV
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Termination :
- SMD/SMT
- Surface Mount :
- yes
- Power Dissipation :
- 225mW
- Length :
- 2.9mm
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 300mW
- Voltage - Rated DC :
- -30V
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Power - Max :
- 300mW
- Pin Count :
- 3
- Height :
- 940μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Current Rating :
- -100mA
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- BC858CLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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