BC858CLT1G
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- Mfr.Part #
- BC858CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 28,253
- In Stock ：
- 28,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Length :
- 2.9mm
- hFE Min :
- 420
- Mounting Type :
- Surface Mount
- Width :
- 1.3mm
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 225mW
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -30V
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Breakdown Voltage :
- 30V
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Termination :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -100mA
- Contact Plating :
- Tin
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -650mV
- Frequency :
- 100MHz
- Height :
- 940μm
- Transition Frequency :
- 100MHz
- Published :
- 2005
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Power - Max :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC858CLT1G
BC858CLT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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