BC858CLT1
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- Mfr.Part #
- BC858CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 100MA SOT23
- Stock
- 42,434
- In Stock ：
- 42,434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2005
- hFE Min :
- 420
- Number of Elements :
- 1
- Power - Max :
- 300mW
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 30V
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Polarity/Channel Type :
- PNP
- Length :
- 2.9mm
- Height :
- 940μm
- Number of Pins :
- 3
- Packaging :
- Cut Tape (CT)
- Max Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -650mV
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -30V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 30V
- Width :
- 1.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- BC858CLT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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