BC858CLT1
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- Mfr.Part #
- BC858CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 100MA SOT23
- Stock
- 42,434
- In Stock ：
- 42,434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Transition Frequency :
- 100MHz
- Power - Max :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 2.9mm
- REACH SVHC :
- No SVHC
- Height :
- 940μm
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -650mV
- hFE Min :
- 420
- Contact Plating :
- Tin
- Published :
- 2005
- Width :
- 1.3mm
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 300mW
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Termination :
- SMD/SMT
- Current Rating :
- -100mA
- Voltage - Rated DC :
- -30V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Datasheets
- BC858CLT1
BC858CLT1 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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