BC858CLT1
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- Mfr.Part #
- BC858CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 100MA SOT23
- Stock
- 42,434
- In Stock ：
- 42,434
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Packaging :
- Cut Tape (CT)
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 225mW
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- -650mV
- Height :
- 940μm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Frequency :
- 100MHz
- Current Rating :
- -100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 420
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Length :
- 2.9mm
- Factory Lead Time :
- 4 Weeks
- Termination :
- SMD/SMT
- Published :
- 2005
- Transistor Type :
- PNP
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Power - Max :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- -30V
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.3mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Datasheets
- BC858CLT1
BC858CLT1 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC858CLT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -650mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC858CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858CLT1G Applications
There are a lot of ON Semiconductor
BC858CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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