BC858CDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

Flat

Number of Elements :

2

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Transistor Type :

2 PNP (Dual)

Number of Pins :

6

Published :

2005

Lead Free :

Lead Free

Surface Mount :

yes

Collector Emitter Saturation Voltage :

-650mV

RoHS Status :

RoHS Compliant

Pin Count :

6

Current - Collector Cutoff (Max) :

15nA ICBO

Gain Bandwidth Product :

100MHz

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Collector Emitter Voltage (VCEO) :

650mV

Current - Collector (Ic) (Max) :

100mA

Polarity :

PNP

Element Configuration :

Dual

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Collector Base Voltage (VCBO) :

-30V

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Voltage - Rated DC :

-30V

Current Rating :

-100mA

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Base Part Number :

BC858CDXV6

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

hFE Min :

270

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON