BC858CDXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

650mV

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Current Rating :

-100mA

Current - Collector Cutoff (Max) :

15nA ICBO

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

Unknown

Pin Count :

6

Lead Free :

Contains Lead

Transistor Type :

2 PNP (Dual)

Collector Emitter Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

-30V

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

JESD-609 Code :

e3

Polarity :

PNP

Transition Frequency :

100MHz

Number of Terminations :

6

Collector Emitter Saturation Voltage :

-650mV

Base Part Number :

BC858CDXV6

Transistor Application :

AMPLIFIER

Max Power Dissipation :

500mW

Number of Elements :

2

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-30V

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Published :

2005

Surface Mount :

yes

Number of Pins :

6

hFE Min :

270

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector (Ic) (Max) :

100mA