BC858CDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

30V

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

500mW

Factory Lead Time :

17 Weeks

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Frequency :

100MHz

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

-30V

Polarity :

PNP

Transistor Type :

2 PNP (Dual)

Surface Mount :

yes

JESD-609 Code :

e3

Current Rating :

-100mA

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Height :

600μm

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Number of Terminations :

6

Gain Bandwidth Product :

100MHz

Base Part Number :

BC858CDXV6

Length :

1.7mm

Transistor Element Material :

SILICON

Width :

1.3mm

Collector Emitter Voltage (VCEO) :

30V

Published :

2005

Lead Free :

Lead Free

Max Breakdown Voltage :

30V

Collector Emitter Saturation Voltage :

-650mV

Current - Collector Cutoff (Max) :

15nA ICBO

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

500mW

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

30V

Pin Count :

6

hFE Min :

420