BC858CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Polarity :

PNP

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Saturation Voltage :

-650mV

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

650mV

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Type :

2 PNP (Dual)

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

420

Pin Count :

6

Gain Bandwidth Product :

100MHz

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Current Rating :

-100mA

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Number of Elements :

2

Number of Terminations :

6

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Element Configuration :

Dual

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

380mW

Collector Base Voltage (VCBO) :

-30V

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Lead Free :

Lead Free

Voltage - Rated DC :

-30V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Current - Collector (Ic) (Max) :

100mA