BC858CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

100mA

Polarity :

PNP

Collector Emitter Saturation Voltage :

-650mV

Gain Bandwidth Product :

100MHz

Max Power Dissipation :

380mW

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

hFE Min :

420

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Number of Terminations :

6

Lead Free :

Lead Free

Number of Elements :

2

Current - Collector Cutoff (Max) :

15nA ICBO

Voltage - Rated DC :

-30V

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector (Ic) (Max) :

100mA

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

100MHz

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Element Configuration :

Dual

Current Rating :

-100mA

Transistor Element Material :

SILICON

Pbfree Code :

yes

Pin Count :

6

Published :

2005

Collector Emitter Breakdown Voltage :

30V

Package / Case :

6-TSSOP, SC-88, SOT-363

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Collector Base Voltage (VCBO) :

-30V

Transistor Type :

2 PNP (Dual)

Mount :

Surface Mount

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

650mV