BC858C RFG
- Mfr.Part #
- BC858C RFG
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 24 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- PNP
- Power - Max :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 100MHz
- Supplier Device Package :
- SOT-23
- Datasheets
- BC858C RFG

PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858C RFG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.The product comes in the supplier device package of SOT-23.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC858C RFG Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the supplier device package of SOT-23
BC858C RFG Applications
There are a lot of Taiwan Semiconductor Corporation
BC858C RFG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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