BC858C-7-F
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- Mfr.Part #
- BC858C-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 820
- In Stock ：
- 820
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Saturation Voltage :
- -650mV
- Current - Collector (Ic) (Max) :
- 100mA
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA
- Width :
- 1.4mm
- Published :
- 2008
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 19 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Weight :
- 7.994566mg
- Base Part Number :
- BC858
- Length :
- 3.05mm
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Number of Elements :
- 1
- Height :
- 1mm
- hFE Min :
- 420
- Max Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Datasheets
- BC858C-7-F
PNP -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858C-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858C-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BC858C-7-F Applications
There are a lot of Diodes Incorporated
BC858C-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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