BC858BWT106
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- Mfr.Part #
- BC858BWT106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A UMT3
- Stock
- 51,848
- In Stock ：
- 51,848
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Continuous Collector Current :
- -100mA
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 13 Weeks
- Current - Collector (Ic) (Max) :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -600mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 250MHz
- JESD-30 Code :
- R-PDSO-G3
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 350mW
- Base Part Number :
- BC85*
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Element Material :
- SILICON
- hFE Min :
- 210
- Voltage - Rated DC :
- -30V
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Voltage (VCEO) :
- 650mV
- Element Configuration :
- Single
- Terminal Finish :
- TIN SILVER COPPER
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2005
- Contact Plating :
- Copper, Silver, Tin
- Datasheets
- BC858BWT106
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858BWT106 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -100mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858BWT106 Features
the DC current gain for this device is 210 @ 2mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BWT106 Applications
There are a lot of ROHM Semiconductor
BC858BWT106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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