BC858BWE6327HTSA1
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- Mfr.Part #
- BC858BWE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT-323
- Stock
- 12,920
- In Stock ：
- 12,920
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Transition Frequency :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Polarity/Channel Type :
- PNP
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2011
- Pbfree Code :
- yes
- Base Part Number :
- BC858
- Frequency - Transition :
- 250MHz
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Power - Max :
- 250mW
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Current - Collector (Ic) (Max) :
- 100mA
- JESD-30 Code :
- R-PDSO-G3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Datasheets
- BC858BWE6327HTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC858BWE6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 250MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
BC858BWE6327HTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
BC858BWE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC858BWE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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