BC858BWE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Product Status :

Active

Collector Current-Max (IC) :

0.1 A

Frequency - Transition :

250MHz

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

150°C (TJ)

Collector-Emitter Voltage-Max :

30 V

Power Dissipation Ambient-Max :

0.25 W

Transistor Type :

PNP

Package Shape :

RECTANGULAR

DC Current Gain-Min (hFE) :

220

Current - Collector (Ic) (Max) :

100 mA

Configuration :

Single

Terminal Position :

Dual

Series :

-

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

30 V

Transistor Element Material :

SILICON

Supplier Device Package :

PG-SOT323-3-1

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA, 5V

Package / Case :

SC-70, SOT-323

Reach Compliance Code :

Unknown

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Surface Mount :

yes

Current - Collector Cutoff (Max) :

15nA (ICBO)

VCEsat-Max :

0.65 V

Qualification Status :

Not Qualified

Manufacturer :

Siemens

ECCN Code :

EAR99

Number of Elements :

1

Package :

Bulk

Terminal Form :

Gull wing

Polarity/Channel Type :

PNP

Number of Terminals :

3

Power - Max :

250 mW