BC858BT116
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- Mfr.Part #
- BC858BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SST3
- Stock
- 1,685
- In Stock ：
- 1,685
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -650mV
- Continuous Collector Current :
- -100mA
- Max Power Dissipation :
- 350mW
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Collector-Base Capacitance-Max :
- 5pF
- Number of Elements :
- 1
- Contact Plating :
- Copper, Silver, Tin
- Number of Terminations :
- 3
- Power - Max :
- 350mW
- Pin Count :
- 3
- hFE Min :
- 210
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- -30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Base Part Number :
- BC85*
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Transition Frequency :
- 250MHz
- Current Rating :
- -100mA
- Mount :
- Surface Mount
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- -30V
- HTS Code :
- 8541.21.00.75
- Collector Emitter Voltage (VCEO) :
- 650mV
- Published :
- 2014
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- BC858BT116
BC858BT116 Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BT116 Overview
In this device, the DC current gain is 210 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC858BT116 Features
the DC current gain for this device is 210 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BT116 Applications
There are a lot of ROHM Semiconductor
BC858BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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