BC858BT116
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- Mfr.Part #
- BC858BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SST3
- Stock
- 1,685
- In Stock ：
- 1,685
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Collector-Base Capacitance-Max :
- 5pF
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC85*
- Collector Base Voltage (VCBO) :
- -30V
- Mount :
- Surface Mount
- Published :
- 2014
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 250MHz
- ECCN Code :
- EAR99
- Power - Max :
- 350mW
- hFE Min :
- 210
- Continuous Collector Current :
- -100mA
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 350mW
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Current Rating :
- -100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 5V
- Element Configuration :
- Single
- Transition Frequency :
- 250MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 650mV
- Contact Plating :
- Copper, Silver, Tin
- Time@Peak Reflow Temperature-Max (s) :
- 10
- HTS Code :
- 8541.21.00.75
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -650mV
- Datasheets
- BC858BT116
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BT116 Overview
In this device, the DC current gain is 210 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
BC858BT116 Features
the DC current gain for this device is 210 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BT116 Applications
There are a lot of ROHM Semiconductor
BC858BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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