BC858BMTF
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- Mfr.Part #
- BC858BMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 1,415
- In Stock ：
- 1,415
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 310mW
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 30V
- Current Rating :
- -100mA
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 150MHz
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 310mW
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Width :
- 1.3mm
- Voltage - Rated DC :
- -30V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- hFE Min :
- 110
- Length :
- 2.9mm
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Height :
- 930μm
- Collector Emitter Voltage (VCEO) :
- 30V
- Base Part Number :
- BC858
- Pbfree Code :
- yes
- Published :
- 2004
- Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- -250mV
- Datasheets
- BC858BMTF
BC858BMTF Documents
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC858BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC858BMTF Applications
There are a lot of ON Semiconductor
BC858BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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