BC858BLT3G
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- Mfr.Part #
- BC858BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 16,827
- In Stock ：
- 16,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Height :
- 940μm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2005
- Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- -650mV
- Surface Mount :
- yes
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Current Rating :
- -100mA
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Voltage - Rated DC :
- -30V
- Max Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 220
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- BC858BLT3G
BC858BLT3G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC858BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858BLT3G Applications
There are a lot of ON Semiconductor
BC858BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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