BC858BLT3G
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- Mfr.Part #
- BC858BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 16,827
- In Stock ：
- 16,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -30V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Width :
- 1.3mm
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Length :
- 2.9mm
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 940μm
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -100mA
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Published :
- 2005
- hFE Min :
- 220
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -650mV
- Datasheets
- BC858BLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC858BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858BLT3G Applications
There are a lot of ON Semiconductor
BC858BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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