BC858BLT3
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- Mfr.Part #
- BC858BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP GP 30V 100MA SOT-23
- Stock
- 2,398
- In Stock ：
- 2,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- -650mV
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Max Breakdown Voltage :
- 30V
- Pin Count :
- 3
- hFE Min :
- 220
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- Height :
- 940μm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.9mm
- Max Power Dissipation :
- 300mW
- Width :
- 1.3mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -30V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Datasheets
- BC858BLT3
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC858BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858BLT3G Applications
There are a lot of ON Semiconductor
BC858BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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