BC858BLT3
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- Mfr.Part #
- BC858BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP GP 30V 100MA SOT-23
- Stock
- 2,398
- In Stock ：
- 2,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Power Dissipation :
- 300mW
- Length :
- 2.9mm
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Contact Plating :
- Tin
- Width :
- 1.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 30V
- hFE Min :
- 220
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Published :
- 2005
- Height :
- 940μm
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -30V
- Collector Emitter Saturation Voltage :
- -650mV
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Current Rating :
- -100mA
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BC858BLT3
BC858BLT3 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC858BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858BLT3G Applications
There are a lot of ON Semiconductor
BC858BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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