BC858BLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Width :

1.3mm

Collector Emitter Saturation Voltage :

-650mV

Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

ECCN Code :

EAR99

hFE Min :

220

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

100MHz

Number of Terminations :

3

Number of Elements :

1

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Current Rating :

-100mA

Voltage - Rated DC :

-30V

Current - Collector Cutoff (Max) :

15nA ICBO

Power Dissipation :

225mW

Power - Max :

300mW

Height :

940μm

REACH SVHC :

No SVHC

Published :

2005

Collector Base Voltage (VCBO) :

30V

Length :

2.9mm

Pbfree Code :

yes

Contact Plating :

Tin

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Factory Lead Time :

4 Weeks

Max Breakdown Voltage :

30V

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

30V