BC858BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2005

Collector Base Voltage (VCBO) :

30V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Pbfree Code :

yes

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Power - Max :

300mW

Max Breakdown Voltage :

30V

REACH SVHC :

No SVHC

hFE Min :

220

ECCN Code :

EAR99

Pin Count :

3

Number of Pins :

3

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

-650mV

Height :

940μm

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Lead Free :

Lead Free

Transition Frequency :

100MHz

Max Collector Current :

100mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

30V

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Length :

2.9mm

Current - Collector Cutoff (Max) :

15nA ICBO

Terminal Form :

Gull wing

Width :

1.3mm

Transistor Type :

PNP

Current Rating :

-100mA

Frequency :

100MHz

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation :

225mW

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

-30V

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

30V

Transistor Element Material :

SILICON