BC858BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Radiation Hardening :

No

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Polarity/Channel Type :

PNP

Element Configuration :

Single

Number of Elements :

1

Height :

940μm

Contact Plating :

Tin

Current Rating :

-100mA

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

yes

Power - Max :

300mW

Max Collector Current :

100mA

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gain Bandwidth Product :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Frequency :

100MHz

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

-650mV

Transistor Type :

PNP

Voltage - Rated DC :

-30V

hFE Min :

220

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

30V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Width :

1.3mm

Pin Count :

3

ECCN Code :

EAR99

Lead Free :

Lead Free

Length :

2.9mm

Transistor Element Material :

SILICON

Power Dissipation :

225mW

Max Breakdown Voltage :

30V