BC858BL3E6327

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Mfr.Part #
BC858BL3E6327
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 0.1A SOT23
Stock
19,824
In Stock :
19,824

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
30V
Transistor Type :
PNP
Element Configuration :
Single
Operating Temperature :
150°C TJ
Package / Case :
TO-236-3, SC-59, SOT-23-3
Base Part Number :
BC858
Collector Emitter Voltage (VCEO) :
30V
ECCN Code :
EAR99
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Mounting Type :
Surface Mount
Published :
2010
RoHS Status :
RoHS Compliant
Current - Collector Cutoff (Max) :
15nA ICBO
Max Collector Current :
100mA
Mount :
Surface Mount
Collector Emitter Breakdown Voltage :
30V
Max Power Dissipation :
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Reach Compliance Code :
Unknown
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Frequency :
250MHz
Polarity/Channel Type :
PNP
Number of Pins :
3
Gain Bandwidth Product :
250MHz
Power Dissipation :
250mW
Datasheets
BC858BL3E6327
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BC858BL3E6327 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:BC858, Mounting Type:Surface Mount, Number of Pins:3, BC858BL3E6327 pinout, BC858BL3E6327 datasheet PDF, BC858BL3E6327 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BC858BL3E6327 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BC858BL3E6327


PNP 150°C TJ 15nA ICBO 1 Elements PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC858BL3E6327 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 100mA volts can be achieved.

BC858BL3E6327 Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V


BC858BL3E6327 Applications


There are a lot of Infineon Technologies
BC858BL3E6327 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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