BC858BHZGT116
- Mfr.Part #
- BC858BHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SST3
- Stock
- 2,800
- In Stock :
- 2,800
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Type :
- BJTs - Bipolar Transistors
- Transition Frequency :
- 250MHz
- Package :
- Digi-Reel?
- Output Power :
- Not Required(W)
- Supplier Device Package :
- SST3
- Collector Current-Max (IC) :
- 0.1 A
- Operating Temp Range :
- -65C to 150C
- Manufacturer :
- Rohm Semiconductor
- Collector-Emitter Voltage-Max :
- 30 V
- Current - Collector (Ic) (Max) :
- 100 mA
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- MSL :
- MSL 1 - Unlimited
- Subcategory :
- Transistors
- DC Current Gain :
- 210@2MA@5V
- Terminal Position :
- Dual
- Continuous Collector Current :
- 100mA
- Number of Terminals :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA, 5V
- Package Type :
- SOT-23
- Packaging :
- Tape and Reel
- Collector Current (DC) :
- 0.1(A)
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Rad Hardened :
- No
- DC Current Gain-Min (hFE) :
- 210
- Reference Standard :
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Base Product Number :
- BC858
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- -
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Transistor Application :
- AMPLIFIER
- Series :
- Automotive, AEC-Q101
- Power - Max :
- 200 mW
- Configuration :
- Single
- Frequency :
- 250(MHz)
- Reach Compliance Code :
- Compliant
- ECCN Code :
- EAR99
- RoHS :
- Details
- Product Category :
- Bipolar Transistors - BJT
- Surface Mount :
- yes
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Brand :
- Rohm Semiconductor
- Mounting :
- Surface Mount
- Technology :
- Si
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 0.35(W)
- Emitter-Base Voltage :
- 5(V)
- Transistor Polarity :
- PNP
- Qualification :
- AEC-Q101
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector-Base Voltage :
- 30(V)
- Operating Temperature Classification :
- Military
- Category :
- Bipolar Small Signal
- Terminal Form :
- Gull wing
- Product Status :
- Not For New Designs
- Datasheets
- BC858BHZGT116
BC858BHZGT116 Documents

150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape and Reel Surface Mount
BC858BHZGT116 Overview
In this device, the DC current gain is 210 @ 2mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.250MHz is present in the transition frequency.Supplier device package SST3 comes with the product.Voltage of maximal collector-emitter is set to 30 V.The device exhibits a collector-emitter breakdown at 30 V.
BC858BHZGT116 Features
the DC current gain for this device is 210 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
the supplier device package of SST3
BC858BHZGT116 Applications
There are a lot of Rohm Semiconductor
BC858BHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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