BC858BHZGT116

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Mfr.Part #
BC858BHZGT116
Manufacturer
ROHM Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 0.1A SST3
Stock
2,800
In Stock :
2,800

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Transistor Application :
AMPLIFIER
Qualification :
AEC-Q101
Base Product Number :
BC858
Emitter-Base Voltage :
5(V)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Gull wing
Category :
Bipolar Small Signal
DC Current Gain :
210@2MA@5V
DC Current Gain-Min (hFE) :
210
Subcategory :
Transistors
Operating Temperature :
150°C (TJ)
Maximum Operating Temperature :
+ 150 C
Package :
Digi-Reel?
Voltage - Collector Emitter Breakdown (Max) :
30 V
Supplier Device Package :
SST3
RoHS :
Details
Product Type :
BJTs - Bipolar Transistors
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
-
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Package Type :
SOT-23
Series :
Automotive, AEC-Q101
Output Power :
Not Required(W)
Reference Standard :
AEC-Q101
Brand :
Rohm Semiconductor
Frequency :
250(MHz)
Technology :
Si
DC Current Gain (hFE) (Min) @ Ic, Vce :
210 @ 2mA, 5V
Polarity/Channel Type :
PNP
Manufacturer :
Rohm Semiconductor
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Number of Terminals :
3
Number of Elements :
1
Collector Current (DC) :
0.1(A)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max) :
100 mA
Operating Temp Range :
-65C to 150C
Terminal Position :
Dual
MSL :
MSL 1 - Unlimited
Mounting Style :
SMD/SMT
Product Category :
Bipolar Transistors - BJT
Continuous Collector Current :
100mA
Transition Frequency :
250MHz
Product Status :
Not For New Designs
Current - Collector Cutoff (Max) :
100nA (ICBO)
Operating Temperature Classification :
Military
Power - Max :
200 mW
Mounting :
Surface Mount
Configuration :
Single
Transistor Polarity :
PNP
Surface Mount :
yes
Collector Current-Max (IC) :
0.1 A
Reach Compliance Code :
Compliant
Collector-Base Voltage :
30(V)
JESD-30 Code :
R-PDSO-G3
Pin Count :
3
Power Dissipation :
0.35(W)
Packaging :
Tape and Reel
Rad Hardened :
No
Collector-Emitter Voltage-Max :
30 V
Datasheets
BC858BHZGT116
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor BC858BHZGT116 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, BC858BHZGT116 pinout, BC858BHZGT116 datasheet PDF, BC858BHZGT116 amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor BC858BHZGT116 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor BC858BHZGT116


150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape and Reel Surface Mount

BC858BHZGT116 Overview


In this device, the DC current gain is 210 @ 2mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.250MHz is present in the transition frequency.Supplier device package SST3 comes with the product.Voltage of maximal collector-emitter is set to 30 V.The device exhibits a collector-emitter breakdown at 30 V.

BC858BHZGT116 Features


the DC current gain for this device is 210 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
the supplier device package of SST3


BC858BHZGT116 Applications


There are a lot of Rohm Semiconductor
BC858BHZGT116 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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