BC858BHZGT116
- Mfr.Part #
- BC858BHZGT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SST3
- Stock
- 2,800
- In Stock :
- 2,800
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Qualification :
- AEC-Q101
- Base Product Number :
- BC858
- Emitter-Base Voltage :
- 5(V)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Category :
- Bipolar Small Signal
- DC Current Gain :
- 210@2MA@5V
- DC Current Gain-Min (hFE) :
- 210
- Subcategory :
- Transistors
- Operating Temperature :
- 150°C (TJ)
- Maximum Operating Temperature :
- + 150 C
- Package :
- Digi-Reel?
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Supplier Device Package :
- SST3
- RoHS :
- Details
- Product Type :
- BJTs - Bipolar Transistors
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- -
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package Type :
- SOT-23
- Series :
- Automotive, AEC-Q101
- Output Power :
- Not Required(W)
- Reference Standard :
- AEC-Q101
- Brand :
- Rohm Semiconductor
- Frequency :
- 250(MHz)
- Technology :
- Si
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA, 5V
- Polarity/Channel Type :
- PNP
- Manufacturer :
- Rohm Semiconductor
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Collector Current (DC) :
- 0.1(A)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 100 mA
- Operating Temp Range :
- -65C to 150C
- Terminal Position :
- Dual
- MSL :
- MSL 1 - Unlimited
- Mounting Style :
- SMD/SMT
- Product Category :
- Bipolar Transistors - BJT
- Continuous Collector Current :
- 100mA
- Transition Frequency :
- 250MHz
- Product Status :
- Not For New Designs
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Operating Temperature Classification :
- Military
- Power - Max :
- 200 mW
- Mounting :
- Surface Mount
- Configuration :
- Single
- Transistor Polarity :
- PNP
- Surface Mount :
- yes
- Collector Current-Max (IC) :
- 0.1 A
- Reach Compliance Code :
- Compliant
- Collector-Base Voltage :
- 30(V)
- JESD-30 Code :
- R-PDSO-G3
- Pin Count :
- 3
- Power Dissipation :
- 0.35(W)
- Packaging :
- Tape and Reel
- Rad Hardened :
- No
- Collector-Emitter Voltage-Max :
- 30 V
- Datasheets
- BC858BHZGT116

150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape and Reel Surface Mount
BC858BHZGT116 Overview
In this device, the DC current gain is 210 @ 2mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.250MHz is present in the transition frequency.Supplier device package SST3 comes with the product.Voltage of maximal collector-emitter is set to 30 V.The device exhibits a collector-emitter breakdown at 30 V.
BC858BHZGT116 Features
the DC current gain for this device is 210 @ 2mA, 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz
the supplier device package of SST3
BC858BHZGT116 Applications
There are a lot of Rohm Semiconductor
BC858BHZGT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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