BC858BE6327HTSA1
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- Mfr.Part #
- BC858BE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT-23
- Stock
- 9,090
- In Stock ：
- 9,090
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Current :
- 100mA
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 650mV
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 250MHz
- Terminal Form :
- Gull wing
- Current Rating :
- -100mA
- Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Voltage - Rated DC :
- -30V
- Configuration :
- Single
- Mount :
- Surface Mount
- Max Power Dissipation :
- 330mW
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Frequency :
- 250MHz
- Base Part Number :
- BC858
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation :
- 330mW
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Published :
- 2005
- Datasheets
- BC858BE6327HTSA1
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858BE6327HTSA1 Overview
DC current gain in this device equals 220 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC858BE6327HTSA1 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC858BE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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