BC858B RFG
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- Mfr.Part #
- BC858B RFG
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Factory Lead Time :
- 24 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Transistor Type :
- PNP
- HTS Code :
- 8541.21.00.95
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 100mA
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 100MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- JESD-30 Code :
- R-PDSO-G3
- Datasheets
- BC858B RFG
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858B RFG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 220 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
BC858B RFG Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858B RFG Applications
There are a lot of Taiwan Semiconductor Corporation
BC858B RFG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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