BC858B,215
- Mfr.Part #
- BC858B,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BC858B - SMALL SIGNAL B
- Stock
- 1,001,360
- In Stock :
- 1,001,360
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Finish :
- Tin (Sn)
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Power - Max :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 100MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- VCEsat-Max :
- 0.65 V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.95
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 100MHz
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BC858
- Datasheets
- BC858B,215

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858B,215 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.
BC858B,215 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC858B,215 Applications
There are a lot of Nexperia USA Inc.
BC858B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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