BC858ALT1G
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- Mfr.Part #
- BC858ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 1,833
- In Stock ：
- 1,833
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2005
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -30V
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 30V
- Height :
- 1.11mm
- Current Rating :
- -100mA
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Max Collector Current :
- 100mA
- Length :
- 3.04mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- hFE Min :
- 125
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Power Dissipation :
- 300mW
- Max Power Dissipation :
- 225mW
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -650mV
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Width :
- 2.64mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Datasheets
- BC858ALT1G
BC858ALT1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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