BC858ALT1G
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- Mfr.Part #
- BC858ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 1,833
- In Stock ：
- 1,833
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -30V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 225mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Height :
- 1.11mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2005
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- -100mA
- Collector Emitter Saturation Voltage :
- -650mV
- Surface Mount :
- yes
- Pin Count :
- 3
- Width :
- 2.64mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.04mm
- Power Dissipation :
- 300mW
- hFE Min :
- 125
- Lead Free :
- Lead Free
- Datasheets
- BC858ALT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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