BC858ALT1
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- Mfr.Part #
- BC858ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 178,176
- In Stock ：
- 178,176
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.64mm
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 4 Weeks
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.04mm
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Pin Count :
- 3
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Height :
- 1.11mm
- hFE Min :
- 125
- Frequency :
- 100MHz
- Voltage - Rated DC :
- -30V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 225mW
- Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Current Rating :
- -100mA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Published :
- 2005
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Datasheets
- BC858ALT1
BC858ALT1 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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