BC858ALT1
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- Mfr.Part #
- BC858ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A SOT23-3
- Stock
- 178,176
- In Stock ：
- 178,176
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 2.64mm
- Collector Emitter Voltage (VCEO) :
- 30V
- hFE Min :
- 125
- Radiation Hardening :
- No
- Height :
- 1.11mm
- Collector Emitter Breakdown Voltage :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2005
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Max Power Dissipation :
- 225mW
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pin Count :
- 3
- Length :
- 3.04mm
- Voltage - Rated DC :
- -30V
- Collector Emitter Saturation Voltage :
- -650mV
- Max Breakdown Voltage :
- 30V
- Datasheets
- BC858ALT1
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC858ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 125 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC858ALT1G Features
the DC current gain for this device is 125 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858ALT1G Applications
There are a lot of ON Semiconductor
BC858ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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